The NVATS4A102PZ is a power MOSFET designed for compact size and high efficiency which can achieve high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications.
特性
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应用
| 终端产品
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| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| Automotive ATPAK Idea for Improving Heat Radiation | AND9415/D (531kB) | 0 | Apr, 2016 |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| Power MOSFET, -30 V, 18.5 mOhm, -44 A, P-Channel | NVATS4A102PZ/D (427kB) | P1 | Dec, 2016 |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| NVATS4A102PZ SPICE PARAMETER | NVATS4A102PZ-SPICE/D (4kB) | 0 | Dec, 2016 |
| Document Title | Document ID/Size | Revision |
|---|---|---|
| DPAK (Single Gauge) / ATPAK | 369AM (58.4kB) | O |
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） | ||
|---|---|---|---|---|---|---|---|---|
| NVATS4A102PZT4G | Product Preview | AEC Qualified PPAP Capable Pb-free Halide free | DPAK (Single Gauge) / ATPAK | 369AM | 1 | Tape and Reel | 3000 | 联系BDTIC |
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NVATS4A102PZT4G | P-Channel | Single | -30 | 20 | -2.6 | -44 | 48 | 31 | 18.5 | 34 | 11.5 | 1490 | 360 | 270 |
