Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. ATPAK devices are Low on-resistance, High current capability and pin-compatible with DPAK(TO-252). AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications.
特性
| 优势
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应用
| 终端产品
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| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| Automotive ATPAK Idea for Improving Heat Radiation | AND9415/D (531kB) | 0 | Apr, 2016 |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| Power MOSFET, -60 V, 13 mOhm, -80 A, P-Channel | NVATS5A302PLZ/D (462kB) | 0 | Sep, 2016 |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| NVATS5A302PLZ SPICE PARAMETER | NVATS5A302PLZ-SPICE/D (4kB) | 0 | Oct, 2016 |
| Document Title | Document ID/Size | Revision |
|---|---|---|
| DPAK (Single Gauge) / ATPAK | 369AM (58.4kB) | O |
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） | ||
|---|---|---|---|---|---|---|---|---|
| NVATS5A302PLZT4G | Active | AEC Qualified PPAP Capable Pb-free Halide free | DPAK (Single Gauge) / ATPAK | 369AM | 1 | Tape and Reel | 3000 | $0.7298 |
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NVATS5A302PLZT4G | P-Channel | Single | -60 | 20 | -2.6 | -80 | 84 | 18 | 13 | 115 | 25 | 5400 | 500 | 370 |
