NVLUD4C26N: Power MOSFET 30V 8.7A 21 mOhm Dual N-Channel UDFN
Automotive Power MOSFET in a UDFN 2.0x2.0x0.5m flat lead package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- UDFN Package with Exposed Drain Pads
- Ultra Low RDS(on)
- Low Profile UDFN 2.0 x 2.0 x 0.55 mm
- Pb−Free, Halogen Free/BFR Free
| 优势- Excellent Thermal Conduction
- Improve System Efficiency
- Board Space Saving
- RoHS Compliant
|
应用- DC-DC Converter
- Power Load Switch
- Wireless Charging
| 终端产品 |
仿真模型 (4)
封装图纸 (1)
数据表 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| Power MOSFET | NVLUD4C26N/D (124kB) | 0 | Dec, 2016 |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NVLUD4C26NTAG | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | UDFN-6 | 517BF | 1 | Tape and Reel | 3000 | $0.3733 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NVLUD4C26NTAG | N-Channel | Dual | 30 | 12 | 1.1 | 9.1 | 2.63 | 36 | 24 | 21 | 5 | | 1.1 | 7.8 | 460 | 225 | 27 |
