RFN6BM2D is the silicon epitaxial planar type Fast Recovery Diode.
| 型号 | Status | 封装 | 包装数量 | 最小独立包装数量 | 包装形态 | RoHS | 数据手册 |
|---|
| RFN6BM2DTL | Active | TO-252 | 2500 | 2500 | Taping | Yes | RFN6BM2D |
技术特性| Taping Code | TL | | Number of terminal | 3 | | VRM[V] | 200 | | Reverse Voltage VR[V] | 200 | | Average Rectified Forward Current IO[A] | 6.0 | | IFSM[A] | 40.0 | | Forward Voltage VF(Max.)[V] | 0.98 | | IF @ Forward Voltage [A] | 3.0 | | Reverse Current IR(Max.)[mA] | 0.01 | | VR @ Reverse Current [V] | 200 | | trr(Max.)[ns] | 25 | | IF @ trr [mA] | 0 | | IR @ trr [A] | 1.0 | | Package Size | 6.6x10.0(t=2.3) | | Mounting Style | Surface mount | | Storage Temperature (Min.)[°C] | -55 | | Storage Temperature (Max.)[°C] | 150 | | Package(JEITA) | SC-63 |
| 技术支持资料下载产品特点- Cathode common dual type
- Low switching loss
- High current overload capacity
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