Super Fast Recovery Diodes - RFN6BM2D

RFN6BM2D is the silicon epitaxial planar type Fast Recovery Diode.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
RFN6BM2DTLActiveTO-25225002500TapingYes

RFN6BM2D Data Sheet

Specifications
Number of terminal3
VRM[V]200
Reverse Voltage VR[V]200
Average Rectified Forward Current IO[A]6.0
IFSM[A]40.0
Forward Voltage VF(Max.)[V]0.98
IF @ Forward Voltage [A]3.0
Reverse Current IR(Max.)[mA]0.01
VR @ Reverse Current [V]200
trr(Max.)[ns]25
IF @ trr [mA]500
IR @ trr [A]1.0
Package Size[mm]6.6x10.0(t=2.2)
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
Package CodeTO-252(DPAK)
Technical Documents
Features
  • Cathode common dual type
  • Low switching loss
  • High current overload capacity
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Super Fast Recovery Diodes - RFN6BM2D (New *) RFN6BM2D
Part Explanation YFZVFH9.1B
Taping Specifications YFZVFH9.1B
Storage Conditions YFZVFH9.1B
Quality and Reliability YFZVFH9.1B