650V 25A Field Stop Trench IGBT RGT50NS65D(LPDS)
罗姆的IGBT（绝缘栅极型双极晶体管）产品为广大的高电压、大电流应用的高效化和节能化做出了贡献。
| 型号 | Status | 封装 | 包装数量 | 最小独立包装数量 | 包装形态 | RoHS |
|---|
|
| RGT50NS65DGTL | 供应中 | LPDS | 1000 | 1000 | Taping | Yes |
RGT50NS65D(LPDS) 数据手册 Data Sheet
技术特性| VCES [V] | 650 | | IC(100°C)[A] | 25 | | VCE(sat) (Typ.) [V] | 1.65 | | tsc(Min.) [us] | 5 | | Built-in Diode | FRD | | Pd [W] | 194 | | VGE(th) (Min.)[V] | 5.0 | | BVCES (Min.)[V] | 650 | | Storage Temperature (Min.)[°C] | -55 | | Storage Temperature (Max.)[°C] | 175 |
| 技术资料下载产品特点- Low Collector-Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5µs
- Built in Very Fast & Soft Recovery FRD (RFN-Series)
- Pb-free Lead Plating; RoHS Compliant
|
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