650V 4A Field Stop Trench IGBT RGT8NS65D

罗姆的IGBT（绝缘栅极型双极晶体管）产品为高电压、大电流应用的高效化和节能化作贡献。

型号Status封装包装数量最小独立包装数量包装形态RoHS
RGT8NS65DGTL供应中LPDS10001000TapingYes

RGT8NS65D 数据手册 Data Sheet

技术特性
VCES [V]650
IC(100°C)[A]4
VCE(sat) (Typ.) [V]1.65
tsc(Min.) [us]5
Built-in DiodeFRD
Pd [W]65
VGE(th) (Min.)[V]5.0
BVCES (Min.)[V]650
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]175
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