SiC MOSFET SCT2H12NZ
SCT2H12NZ是1700V 3.7A的Nch SiC功率MOSFET：
SCT2H12NZ 。
| 型号 | Status | 封装 | 包装数量 | 最小独立包装数量 | 包装形态 | RoHS |
|---|
|
| SCT2H12NZGC11 | 供应中 | TO-3PFM | 450 | 30 | Tube | Yes |
SCT2H12NZ 数据手册 Data Sheet
技术特性| Drain-source Voltage[V] | 1700 | | Drain-source On-state Resistance(Typ.)[mΩ] | 1150 | | Drain Current[A] | 3.7 | | Total Power Dissipation[W] | 35 | | Junction Temperature(Max.)[°C] | 175 | | Storage Temperature (Min.)[°C] | -55 | | Storage Temperature (Max.)[°C] | 175 |
| 技术资料下载产品特点- Low on-resistance
- Fast switching speed
- Long creepage distance
- Simple to drive
- Pb-free lead plating; RoHS compliant
|
相关产品
