2STA1943：High power PNP epitaxial planar bipolar transistor
This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
Key Features
- High breakdown voltage VCEO
> -230V
- Fast-switching speed
- Complementary to 2STC5200
- Typical fT
= 30MHz
产品规格
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| 2STA1943 | TO-264 | Tube | 1.296 | 50 | NEC | EAR99 | - |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| 2STA1943 | TO-264 | Industrial | Ecopack1 | |
