The device in a PNP transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Key Features
Description | Version | Size |
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DS4952: Low voltage fast-switching PNP power bipolar transistor | 3.3 | 199 KB |
型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
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2STN2540 | SOT-223 | Tape And Reel | 0.165 | 500 | NEC | EAR99 | CHINA |
型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|---|---|---|---|
2STN2540 | SOT-223 | Industrial | Ecopack2 | md_ll-wspc-sot-wspc-223_csll-wspc-bi18t6f.pdf md_ll-wspc-sot-wspc-223_csll-wspc-bi18t6f.xml |