The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
Key Features
| Description | Version | Size |
|---|---|---|
| DS1154: High voltage fast-switching NPN power transistor | 3.2 | 257 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| BULD118D-1 | IPAK | Tube | 0.258 | 500 | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| BULD118D-1 | IPAK | Industrial | Ecopack2 | md_ik-wspc-ipak-wspc-to-251_tsikbv76s6f-wspc-(buld118d-1)-wspc-wcp-wspc-ver2_signed.pdf md_ik-wspc-ipak-wspc-to-251_tsikbv76s6f-wspc-(buld118d-1)-wspc-wcp-wspc-ver2.xml |
