The MJD340 and MJD350 form complementary NPN -PNP pairs.
They are manufactured using Medium Voltage Epitaxial-Planar technology, resulting in a rugged high performance cost-effective transistor.
Key Features
| Description | Version | Size |
|---|---|---|
| DS0780: Complementary silicon power transistors | 3.5 | 503 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| MJD350T4 | DPAK | Tape And Reel | 0.25 | 500 | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| MJD350T4 | DPAK | Industrial | Ecopack2 | md_dp-wspc-to-wspc-252-wspc-dpak_cqdp-wspc-f204t62.pdf md_dp-wspc-to-wspc-252-wspc-dpak_cqdp-wspc-f204t62.xml |
