SCTW100N65G2AG：Automotive silicon carbide Power MOSFET 650 V, 100 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The main features of this product include remarkably low on-resistance per unit area and very good switching performance. The variation of both RDS(on) and switching losses are almost independent from junction temperature.

Key Features

  • Designed for automotive applications
  • Tight variation of on-resistance vs. temperature
  • Very fast and robust intrinsic body diode
  • Very high operating temperature capability (TJ = 200 °C)
  • Low capacitance
产品规格
DescriptionVersionSize
DS11643: Automotive silicon carbide Power MOSFET 650 V, 100 A, 22 mΩ (typ., TJ=150 °C), in an HiP247™ package1.0398 KB
应用手册
DescriptionVersionSize
AN4671: 如何调整碳化硅 MOSFET 驱动减少功率损耗1.1608 KB
AN3152: The right technology for solar converters1.4416 KB
Technical Notes & Articles
DescriptionVersionSize
TA0349: Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs2.22 MB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
宣传册
DescriptionVersionSize
SiC MOSFETs: The real breakthrough in high-voltage switching2.01 MB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
会议文章
DescriptionVersionSize
Cost benefits of a SiC MOSFET-based high frequency converter1.01 MB
Wide bandgap materials: revolution in automotive power electronics1.0792 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
SCTW100N65G2AGHiP247 IN LINETube--NECEAR99-
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
SCTW100N65G2AGHiP247 IN LINEAutomotiveEcopack2
Automotive silicon carbide Power MOSFET 650 V, 100 A, 22 mΩ (typ., TJ=150 °C), in an HiP247™ package SCTW100N65G2AG
如何调整碳化硅 MOSFET 驱动减少功率损耗 SCTWA50N120
The right technology for solar converters SCTWA50N120
Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs SCTWA50N120
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs SCTWA50N120
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