The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
It uses a Cellular Emitter structure to enhance switching speeds.
Key Features
Description | Version | Size |
---|---|---|
DS3321: High voltage fast-switching NPN power transistor | 1.3 | 221 KB |
型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
---|---|---|---|---|---|---|---|
ST13007DFP | TO-220FP | Tube | 0.333 | 500 | NEC | EAR99 | CHINA |
型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|---|---|---|---|
ST13007DFP | TO-220FP | Industrial | Ecopack2 |