STD20P3H6AG:Automotive-grade P-channel -30 V, 33 mOhm typ., -20 A STripFET F6 Power MOSFET in a DPAK package
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Key Features
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
产品规格
应用手册
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
型号 | 制造商 | Description |
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ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
---|
STD20P3H6AG | DPAK | Tape And Reel | 0.6 | 1000 | NEC | EAR99 | CHINA |
质量和可靠性
型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STD20P3H6AG | DPAK | Automotive | Ecopack1 | |