STD26P3LLH6：P-channel 30 V, 0.024 Ohm typ., 12 A, STripFET(TM) VI DeepGATE Power MOSFET in a DPAK package

This device is a P-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages

Key Features

  • RDS(on) * Qg industry benchmark
  • Extremely low on-resistance RDS(on)
  • High avalanche ruggedness
  • Low gate input resistance
产品规格
DescriptionVersionSize
DS9219: P-channel 30 V, 0.024 Ω typ., 12 A, STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package5.0982 KB
应用手册
DescriptionVersionSize
AN1703: Guidelines for using ST's MOSFET smd Packages1.3776 KB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STD26P3LLH6 PSpice model1.04 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STD26P3LLH6DPAKTape And Reel0.681000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STD26P3LLH6DPAKIndustrialEcopack2
P-channel 30 V, 0.024 Ω typ., 12 A, STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package STD26P3LLH6
Guidelines for using ST's MOSFET smd Packages STD26P3LLH6
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STD26P3LLH6
Very low drop voltage regulators with inhibit KFXX
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