STFH13N60M2：N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to
its strip layout and an improved vertical structure, the device exhibits low
on-resistance and optimized switching characteristics, rendering it suitable for the
most demanding high efficiency converters.
The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.
Key Features
- Extremely low gate charge
- Excellent output capacitance (COSS
) profile
- 100% avalanche tested
- Zener-protected
- Wide creepage distance of 4.25 mm between the pins
产品规格
应用手册
Technical Notes & Articles
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STFH13N60M2 | TO-220FP wide creepage | Tube | 1.55 | 1000 | NEC | EAR99 | CHINA |
质量和可靠性
