STGB20NB41LZ：20 A, 410 V internally clamped IGBT
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.
Key Features
- HIGH VOLTAGE CLAMPING FEATURE
- POLYSILICON GATE VOLTAGE DRIVEN
- LOW ON-VOLTAGE DROP
- LOW THRESHOLD VOLTAGE
- HIGH CURRENT CAPABILITY
- LOW GATE CHARGE
产品规格
应用手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | Eoff
(mJ) (typ) (@ Tc = 125 °C) | PTOT
(W) (max) | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGB20NB41LZT4 | D2PAK | Tape And Reel | 1.778 | 1000 | 18.4 | 200 | NEC | EAR99 | CHINA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGB20NB41LZT4 | D2PAK | Automotive | Ecopack1 | |
