STGD6M65DF2：Trench gate field-stop IGBT, M series 650 V, 6 A low loss
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Key Features
- 6 µs of short-circuit withstand time
- VCE(sat)
= 1.55 V (typ.) @ IC
= 6 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
产品规格
应用手册
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGD6M65DF2 | DPAK | Tape And Reel | - | - | NEC | EAR99 | CHINA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGD6M65DF2 | DPAK | Industrial | Ecopack2 | |
