STGW15H120DF2：Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the improved H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ
= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)
= 2.1 V (typ.) @ IC
= 15 A
- 5 μs minimum short circuit withstand time at TJ
=150 °C
- Safe paralleling
- Very fast recovery antiparallel diode
- Low thermal resistance
产品规格
应用手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGW15H120DF2 | TO-247 | Tube | 2.7 | 1000 | NEC | EAR99 | - |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STGW15H120DF2 | TO-247 | Industrial | Ecopack2 | |
