STGWA25H120DF2：Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Key Features
- Maximum junction temperature: TJ
= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)
= 2.1 V (typ.) @ IC
= 25 A
- 5 μs minimum short circuit withstand time at TJ
=150 °C
- Safe paralleling
- Very fast recovery antiparallel diode
- Low thermal resistance
产品规格
应用手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGWA25H120DF2 | TO-247 long leads | Tube | 3.7 | 1000 | NEC | EAR99 | - |
质量和可靠性
