STGWT80H65DFB：Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
These are IGBT devices developed using an
advanced proprietary trench gate and field-stop
structure. The devices are part of the new HB
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
Key Features
- Maximum junction temperature: TJ
= 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat)
= 1.6 V (typ.) @ IC
= 80 A
- Safe paralleling
- Tight parameter distribution
- Low thermal resistance
- Very fast soft recovery antiparallel diode
产品规格
应用手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-IGBT-FINDER | ST | IGBT product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STGWT80H65DFB | TO-3P | Tube | 5.5 | 1000 | NEC | EAR99 | KOREA (south) |
质量和可靠性
