STH260N6F6-2：N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

Key Features

  • Low gate charge
  • Very low on-resistance
  • High avalanche ruggedness
产品规格
DescriptionVersionSize
DS7207: N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package4.1725 KB
应用手册
DescriptionVersionSize
AN3267: Impact of power MOSFET VGS on buck converter performance1.21 MB
AN4191: Power MOSFET: Rg impact on applications1.11 MB
AN4390: ST’s MOSFET technologies for uninterruptible power supplies1.11 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STH260N6F6-2 PSpice model1.09 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STH260N6F6-2H2PAK-2Tape And Reel--NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STH260N6F6-2H2PAK-2IndustrialEcopack1
N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package STH260N6F6-2
Impact of power MOSFET VGS on buck converter performance STL8DN6LF3
Power MOSFET: Rg impact on applications STL8DN6LF3
ST’s MOSFET technologies for uninterruptible power supplies STL8DN6LF3
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STH260N6F6-2
Very low drop voltage regulators with inhibit KFXX
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