STN3P6F6：P-channel 60 V, 0.13 Ohm typ., 3 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a SOT-223 package

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
产品规格
DescriptionVersionSize
DS9301: P-channel -60 V, 0.13 Ω typ., -3 A STripFET™ F6 Power MOSFET in a SOT-223 package6.0589 KB
应用手册
DescriptionVersionSize
AN1703: Guidelines for using ST's MOSFET smd Packages1.3776 KB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STN3P6F6SOT-223Tape And Reel0.71000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STN3P6F6SOT-223IndustrialEcopack2md_ll-wspc-sot-wspc-223_csll6p6ab6f-wspc-(stn3p6f6)-wspc-wcp-wspc-ver2_signed.pdf
md_ll-wspc-sot-wspc-223_csll6p6ab6f-wspc-(stn3p6f6)-wspc-wcp-wspc-ver2.xml
P-channel -60 V, 0.13 Ω typ., -3 A STripFET™ F6 Power MOSFET in a SOT-223 package STN3P6F6
Guidelines for using ST's MOSFET smd Packages STD26P3LLH6
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX
md_ll-wspc-sot-wspc-223_csll6p6ab6f-wspc-(stn3p6f6)-wspc-wcp-wspc-ver2_signed.pdf STN3P6F6
md_ll-wspc-sot-wspc-223_csll6p6ab6f-wspc-(stn3p6f6)-wspc-wcp-wspc-ver2.xml STN3P6F6
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