STR2P3LLH6：P-Channel 30 V, 0.048 Ohm typ., 2 A STripFET H6 Power MOSFET in a SOT-23 package
This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
产品规格
应用手册
用户手册
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STR2P3LLH6 | SOT-23 | Tape And Reel | 0.36 | 1000 | NEC | EAR99 | CHINA |
质量和可靠性
