STT4P3LLH6：P-Channel 30 V, 0.048 Ohm typ., 4 A STripFET H6 Power MOSFET in a SOT23-6L package

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Very low on-resistance RDS(on)
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
产品规格
DescriptionVersionSize
DS9649: P-Channel 30 V, 0.048 Ω typ., 4 A STripFET™ H6 DeepGATE™ Power MOSFET in an SOT23-6L package2.0435 KB
应用手册
DescriptionVersionSize
AN4391: New P-channel trench technology from ST for low power DC-DC conversions and load switching applications1.01 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STT4P3LLH6SOT23-6LTape And Reel0.51000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STT4P3LLH6SOT23-6LIndustrialEcopack2
P-Channel 30 V, 0.048 Ω typ., 4 A STripFET™ H6 DeepGATE™ Power MOSFET in an SOT23-6L package STT4P3LLH6
New P-channel trench technology from ST for low power DC-DC conversions and load switching applications STL6P3LLH6
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX
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