STV300NH02L:N-channel 24 V, 0.8 mOhm, 120 A PowerSO-10
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
Key Features
- RDS(on)
*Qg
industry’s benchmark
- Conduction losses reduced
- Low profile, very low parasitic inductance
- Switching losses reduced
产品规格
应用手册
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
型号 | 制造商 | Description |
---|
ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
---|
STV300NH02L | PowerSO-10 | Tape And Reel | 2.895 | 1000 | NEC | EAR99 | MOROCCO |
质量和可靠性
型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|
STV300NH02L | PowerSO-10 | Industrial | Ecopack1 | |