STW48N60M2-4：N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO247-4 package

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Excellent switching performance thanks to the extra driving source pin
  • Extremely low gate charge
  • Excellent output capacitance (Coss ) profile
  • 100% avalanche tested
  • Zener-protected
产品规格
DescriptionVersionSize
DS10507: N-channel 600 V, 0.06 Ω typ., 42 A MDmesh™ M2 Power MOSFET in a TO247-4 package2.0760 KB
应用手册
DescriptionVersionSize
AN4407: Advantage of the use of an added driver source lead in discrete Power MOSFETs2.05 MB
AN4250: Fishbone diagram for power factor correction1.1772 KB
AN4829: Fishbone diagrams for a forward converter1.11 MB
AN4720: Half bridge resonant LLC converters and primary side MOSFET selection1.01 MB
AN4742: MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology1.01 MB
AN4406: MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies1.0652 KB
AN2842: Paralleling of power MOSFETs in PFC topology1.4896 KB
AN2344: Power MOSFET avalanche characteristics and ratings1.3880 KB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
Technical Notes & Articles
DescriptionVersionSize
TN1156: Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products1.0657 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STW48N60M2-4 PSpice model1.09 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STW48N60M2-4TO247-4Tube5.51000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STW48N60M2-4TO247-4IndustrialEcopack2md_a0tm-wspc-to247-4_tstm-wspc-mq6ib6f.pdf
md_a0tm-wspc-to247-4_tstm-wspc-mq6ib6f.xml
N-channel 600 V, 0.06 Ω typ., 42 A MDmesh™ M2 Power MOSFET in a TO247-4 package STW48N60M2-4
Advantage of the use of an added driver source lead in discrete Power MOSFETs STW69N65M5-4
Fishbone diagram for power factor correction STWA3N170
Fishbone diagrams for a forward converter STI21N65M5
Half bridge resonant LLC converters and primary side MOSFET selection L6699
MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology STP6N65M2
MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies STP6N65M2
Paralleling of power MOSFETs in PFC topology STWA3N170
Power MOSFET avalanche characteristics and ratings STWA3N170
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products STWA3N170
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STW48N60M2-4
Very low drop voltage regulators with inhibit KFXX
md_a0tm-wspc-to247-4_tstm-wspc-mq6ib6f.pdf STW48N60M2-4
md_a0tm-wspc-to247-4_tstm-wspc-mq6ib6f.xml STW48N60M2-4
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