STW4N150：N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-247

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.

The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

Key Features

  • 100% avalanche tested
  • High speed switching
  • Intrinsic capacitances and Qg minimized
  • Creepage distance path is 5.4 mm (typ.) for TO-3PF
  • Fully isolated TO-3PF plastic packages
产品规格
DescriptionVersionSize
DS4257: N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF9.2754 KB
应用手册
DescriptionVersionSize
AN4250: Fishbone diagram for power factor correction1.1772 KB
AN2842: Paralleling of power MOSFETs in PFC topology1.4896 KB
AN2344: Power MOSFET avalanche characteristics and ratings1.3880 KB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
Technical Notes & Articles
DescriptionVersionSize
TN1156: Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products1.0657 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STW4N150 PSpice model (.lib)1.0933 bytes
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STW4N150TO-247Tube--NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STW4N150TO-247IndustrialEcopack2md_lw-wspc-to-wspc-247_tslw-wspc-msak6wf.pdf
md_lw-wspc-to-wspc-247_tslw-wspc-msak6wf.xml
N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF STFW4N150
Fishbone diagram for power factor correction STWA3N170
Paralleling of power MOSFETs in PFC topology STWA3N170
Power MOSFET avalanche characteristics and ratings STWA3N170
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products STWA3N170
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STW4N150
Very low drop voltage regulators with inhibit KFXX
md_lw-wspc-to-wspc-247_tslw-wspc-msak6wf.pdf STW4N150
md_lw-wspc-to-wspc-247_tslw-wspc-msak6wf.xml STW4N150
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