The devices are manufactured in planar technology with \"base island\" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Key Features
| Description | Version | Size |
|---|---|---|
| DS0854: Complementary power Darlington transistors | 4.2 | 609 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| TIP122 | TO-220AB | Tube | 0.187 | 500 | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| TIP122 | TO-220AB | Industrial | Ecopack2 | md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldzbb01s6f.pdf md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldzbb01s6f.xml |
