HMC-ALH444-DIE Low Noise Amplifier Chip, 1 - 12 GHz
The HMC-ALH444 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 1 and 12 GHz. The amplifier provides 17 dB of gain, 1.5 dB noise figure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage.
Applications
- Wideband Communication Systems
- Surveillance Systems
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- Military & Space
- Test Instrumentation
- VSAT
Features and BenefitsNoise Figure: 1.75 dB @ 10 GHzGain: 17 dBP1dB Output Power:
+19 dBm @ 5 GHzSupply Voltage:
+5V @ 55 mADie Size:
2.64 x 1.64 x 0.1 mm | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC-ALH444 Production | CHIPS OR DIE | OTH 50 | 25C | 62.77 | 49.9 | Y |
| HMC-ALH444-SX Production | CHIPS OR DIE | OTH 2 | 25C | 0 | 0 | Y |
Reference Materials
