HMC-ALH444 低噪声放大器芯片，1 - 12 GHz _ BDTIC 中国领先电子元器件代理商

HMC-ALH444是一款GaAs MMIC HEMT宽带低噪声放大器芯片，工作频率范围为1至12 GHz。该放大器提供17 dB增益、1.5 dB噪声系数和+19 dBm输出功率（1 dB增益压缩），采用+5V电源电压时功耗仅为55 mA。

噪声系数：
1.75 dB (10 GHz)

增益： 17 dB

P1dB输出功率：
+19 dBm (5 GHz)

电源电压：
+5V (55 mA)

裸片尺寸：
2.64 x 1.64 x 0.1 mm

文档	备注
HMC-ALH444 Data Sheet	PDF 551.69 K

文档	备注
AN-1363: 利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 (Rev. 0)	PDF 804.11 K
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)	PDF 804.11 K
MMIC Amplifier Biasing Procedure Application Note	PDF 435.1 K
Broadband Biasing of Amplifiers General Application Note	PDF 433.77 K
Thermal Management for Surface Mount Components General Application Note	PDF 189.99 K

产品型号	封装	包装数量	温度范围	美金报价 100-499	美金报价 1000+	RoHS
HMC-ALH444 量产	CHIPS OR DIE	OTH 50	25至	62.77	49.9	Y
HMC-ALH444-SX 量产	CHIPS OR DIE	OTH 2	25至	0	0	Y








Other: 38, 60 & 82 GHz MMICs for High Capacity Communication Links hmc-sdd112; AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0) hmc8120; AN-1363: 利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 (Rev. 0) hmc8120; Broadband Biasing of Amplifiers General Application Note hmc1049lp5e; HMC-ALH444 S-Parameter hmc-alh444-die; MMIC Amplifier Biasing Procedure Application Note hmc1049lp5e; Thermal Management for Surface Mount Components General Application Note hmc1049lp5e