HMC435A SPDT Non-Reflective Switch, DC - 4 GHz
The HMC435AMS8G(E) is a non-reflective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with exposed ground paddle. The switch is ideal for cellular/3G and WiMAX/4G applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +50 dBm input IP3. Power handling is excellent up through the 3.8 GHz WiMAX band with the switch offering a P1dB compression of +30 dBm. On-chip circuitry allows positive voltage control of 0/+5 Volts at very low DC currents.
Applications
Features and Benefits- High Isolation:
62 dB @ 1 GHz
52 dB @ 2 GHz - Positive Control: 0/+5V
- Input IP3: 54 dBm
- Non-Reflective Design
- Ultra Small MSOP-86 Package:
- 14.8 mm2
| S-Parameters |
Data Sheets
Order Information
Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
---|
HMC435AMS8G Production | EXPOSSED PAD SOIC | OTH 50 | -40 to 85C | 0 | 0 | N |
HMC435AMS8GE Production | 8 ld MSOP_EP | OTH 50 | -40 to 85C | 1.69 | 1.14 | Y |
HMC435AMS8GETR Production | 8 ld MSOP_EP | REEL 500 | -40 to 85C | 1.69 | 1.14 | Y |
HMC435AMS8GTR Production | EXPOSSED PAD SOIC | REEL 500 | -40 to 85C | 0 | 0 | N |
Evaluation Boards
Part Number | Description | Price | RoHS |
---|
105143-HMC435AMS8G | Evaluation Board - HMC435AMS8G Evaluation Board | 109.99 | Y |
Reference Materials