HMC606-Die Wideband Low Phase Noise Amplifier Chip, 2 - 18 GHz

The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise perfor-mance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output powe at 1 dB gain compression which requiring 64 mA from a +5V supply. The HMC606 amplifier I/O's are internally mateched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mil). Applications

Features and Benefits

Ultra Low Phase Noise:
-160 dBc/Hz @ 10 kHz

P1dB Output Power: +15 dBm

Gain: 14 dB

Output IP3: +27 dBm

Supply Voltage: +5V @64mA

50 Ohm Matched Input/Output

Die Size: 2.11 x 1.32 x 0.10 mm

Amplifiers

Wideband Distributed Amplifiers

S-Parameters

HMC606 Die S-Parameters .ZIP

Data Sheets

Document	note
HMC606 Die Data Sheet	PDF 678.32 K

Application Notes

Document	note
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)	PDF 804.11 K
MMIC Amplifier Biasing Procedure Application Note	PDF 435.1 K
Broadband Biasing of Amplifiers General Application Note	PDF 433.77 K
Thermal Management for Surface Mount Components General Application Note	PDF 189.99 K