Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ @ VGS = 4.5V(nC) | QG Typ@ VGS = 10V(nC) |
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DMC1030UFDBQ | DMC1030UFDBQ.pdf | DMC1030UFDBQ | Yes | Yes | N P | Yes | 12 | 8 | 3.9 5.1 | 1.36 | - | 34 59 | 40 81 | 115 50 | 0.4 | 1 | 1003 1028 | 6 | 12.2 13 | - |
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.