Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ @ VGS = 4.5V(nC) | QG Typ@ VGS = 10V(nC) |
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DMC2990UDJ | DMC2990UDJ.pdf | DMC2990UDJ | Yes | Yes | N P | Yes | 20 20 | 8 8 | 0.31 0.45 | 0.35 | - | 1900 990 | 2400 1200 | 3400 1800 | 0.4 0.5 | 1 1 | 27.6 28.7 | - | 0.4 0.5 | 0 |
This new generation 20V N + P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.