BSS138L: N-Channel Logic Level Enhancement Mode Field Effect Transistor

This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology.This product minimizes on-state resistance while providing rugged, reliable, and fast switching performance. This product is particularly suited for low-voltage, lowcurrent applications such as small servo motor control, power MOSFET gate drivers, logic level translator, high speed line drivers, power management/power supply and switching applications.

Features

• High Density Cell Design for Low R_DS(ON)
• Rugged and Reliable
• Compact Industry Standard SOT-23 Surface Mount Package
• Very Low Capacitance
• Fast Switching Speed

Application Notes