BSS138_F085: N-Channel Logic Level Enhancement Mode Field Effect Transistor

These N-Channel enhancement mode field effect tran sistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while pro vide rugged, reliable, and fast switching perfor mance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and otherswitching applications.

Features

• 0.22 A, 50 V
  R_DS(ON) = 3.5Ω @ V_GS = 10 V R_DS(ON) = 6.0Ω @ V_GS = 4.5 V
  
• High density cell design for extremely low R_DS(ON)
  
• Rugged and Reliable
  
• Compact industry standard SOT-23 surface mount package