BSS84: P-Channel Enhancement Mode Field Effect Transistor

This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.

Features

• BSS84:-0.13 A, -50 V. R_DS(ON) = 10 Ω @ V_GS = -5 V
• Voltage-controlled P-channel small signal switch
• High-Density Cell Design for Low R_DS(ON)
• High Saturation Current.

Application Notes