FCPF36N60NT: N-Channel SupreMOS® MOSFET 600V, 36A, 90mΩ
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
Features
- RDS(on) = 81mΩ ( Typ.)@ VGS = 10V, ID = 18A
- Ultra low gate charge ( Typ. Qg = 86nC)
- Low effective output capacitance
- 100% avalanche tested
- RoHS compliant
Ordering CodeProduct | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
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FCPF36N60NT | Full Production
Green as of Aug 2012
China RoHS | $6.6492 | TO-220F 3L
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4.7 x 10.06 x 15.87mm,
RAIL | Line 1$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 2FCPF
Line 336N60NT
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Application Notes
AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011AN-9010 MOSFET Basics Last Update : 09-Sep-2013AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014