FDC30N20DZ: 30 V Dual N-Channel PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process. This process has been optimized for rDS(on), switching performance and ruggedness.

Features

• Max r_DS(on) = 31 mΩ at V_GS = 10 V, I_D = 4.6 A
  
• Max r_DS(on) = 38 mΩ at V_GS = 4.5 V, I_D = 4.2 A
  
• High Performance Trench® Technology for Extremely Low r_DS(on)
  
• Fast Switching Speed
  
• 100% UIL Tested
  
• Typical CDM ESD protection level > 2.0 kV ( Note 5)
  
• RoHS Compliant
  

Application Notes