FDC608PZ: -20V P-Channel 2.5V PowerTrench® Specified MOSFET

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.     These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.

Features

• -5.8A, -20V, R_DS(on) = 30mΩ @ V_GS = -4.5V R_DS(on) = 43mΩ @ V_GS = -2.5V
• Low gate charge
• High performance trench technology for extremely low R_DS(on)
• SuperSOT^™ ¨C6 package: small footprint (72% smaller than standard SO¨C8) low profile (1mm thick)

Application Notes