FDC6302P: Digital FET, Dual P-Channel

These Dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switchimg applications. Since bias resistors are not required this one P-Channel FET can replace several digital transistors with different bias resistors like the IMBxA series.

Features

• -25 V, -0.12 A continuous, -0.5 A Peak
  
• RDS(ON) = 13 Ω @ VGS= -2.7 V
  
• RDS(ON) = 10 Ω @ VGS = -4.5 V
  
• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V
  
• Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
  
• Replace multiple PNP digital transistors (IMHxA series) with one DMOS FET
  

Application Notes