FDC6305N: Dual N-Channel 2.5V Specified PowerTrench® MOSFET

These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• 2.7 A, 20 V
  
• R_DS(on) = 0.08Ω @ V_GS = 4.5V
  
• R_DS(on) = 0.12Ω @ V_GS = 2.5V
  
• Low gate charge (3.5nC typical)
  
• Fast switching speed
  
• High performance trench technology for extremelylow R_DS(ON)
  
• SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick)
  

Application Notes