FDC6318P: Dual P-Channel 1.8V PowerTrench MOSFET

These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• -2.5A, -12V. R_DS(ON) = 90mΩ @ V_GS = -4.5V R_DS(ON) = 125mΩ @ V_GS = -2.5V R_DS(ON) = 200mΩ @ V_GS = -1.8V
• High performance trench technology for extremely low R_DS(ON)
• SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

Application Notes