FDC638P: Single P-Channel 2.5V Specified PowerTrench® MOSFET

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Features

• –4.5 A, –20 V.R_DS(ON) = 65 mΩ @ V_GS = –2.5 V
  
  • RDS(ON) = 48 mΩ @ VGS = –4.5 V
• R_DS(ON) = 48 mΩ @ V_GS = –4.5 V
  
• Low gate charge (10 nC typical)
  
• High performance trench technology for extremely low R_DS(ON)
  
• SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)
  

Application Notes