FDC653N: N-Channel Enhancement Mode Field Effect Transistor

This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

• 5 A, 30 V
  
• R_DS(ON) = 0.035 Ω @ V_GS = 10 V
  
• R_DS(ON) = 0.055 Ω @ V_GS = 4.5 V
  
• Proprietary SuperSOT^TM-6 package design using copper lead frame for superior thermal and electrical capabilities
  
• High density cell design for extremely low R_DS(ON)
  
• Exceptional on-resistance and maximum DC current capability
  

Application Notes