FDC654P: P-Channel Enhancement Mode Field Effect Transistor

This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications.

Features

• -3.6 A, -30 V
  
• R_DS(ON) = 75 mΩ @ V_GS = -10 V
  
• R_DS(ON) = 125 mΩ @ V_GS = -4.5 V
  
• Low gate charge (6.2nC typical)
  
• High performance trench technology for extremely low R_DS(ON)
  

Application Notes