FDD1600N10ALZD: BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 6.8 A, 160 mΩ

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.

Features

• R_DS(on) = 124 mΩ( Typ.)@ V_GS = 10 V, I_D = 3.4 A
• R_DS(on) = 175 mΩ ( Typ.)@ V_GS = 5.0 V, I_D = 2.1 A
• Low Gate Charge ( Typ.2.78 nC)
• Low C_rss ( Typ. 2.04 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant

Application Notes