FDD3706: 20V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

Features

• 50 A, 20 V
  
• R_DS(ON) = 9 mΩ @ V_GS = 10 V
  
• R_DS(ON) = 11 mΩ @ V_GS = 4.5 V
  
• R_DS(ON) = 16 mΩ @ V_GS = 2.5 V
  
• Low gate charge (16nC typical)
  
• Fast switching speed
  
• High performance trench technology for extremelylow R_DS(ON)
  

Application Notes